Zinc Oxide Electron Transport Layer Research Articles

Role of the ZnO electron transport layer in PbS colloidal quantum dot solar cell yield.

The development of lead sulfide (PbS) colloidal quantum dot (CQD) solar cells has led to significant power conversion efficiency (PCE) improvements in recent years, with record efficiencies now over 15%. Many of the recent advances in improving PCE have focused on improving the interface between the PbS CQD active layer and the zinc oxide (ZnO) electron transport layer (ETL). Proper optimization of the ZnO ETL also increases yield, or the percentage of functioning devices per fabrication run. Simultaneous improvements in both PCE and yield will be critical as the field approaches commercialization. This review highlights recent advances in the synthesis of ZnO ETLs and discusses the impact and critical role of ZnO synthesis conditions on the PCE and yield of PbS CQD solar cells.

Enhancing the indoor performance of organic photovoltaic devices: interface engineering with an aminobenzoic-acid-based self-assembled monolayer

Significant advances in the performance of organic photovoltaic (OPV) devices can facilitate their use in internet of things applications. However, achieving excellent photostability and high efficiency using stable, efficient OPV devices in indoor settings is considerably difficult. To address this issue, a zinc oxide (ZnO) electron transport layer (ETL) was modified with a self-assembled monolayer of 4-aminobenzoic acid (ABA) in the present study, and the impact of this modification was correlated with the indoor performance of an OPV device with the PM6:L8-BO photoactive layer. The ABA-treated ZnO ETL exhibited a significant reduction in the work function (from 4.51 to 4.04 eV), surface roughness (from 0.201 to 0.177 nm), and hydrophilicity of an indium-tin-oxide electrode; this aided in selectively extracting charge carriers from the device and minimizing trap-assisted recombination losses. Additionally, the ABA treatment of the ZnO ETL considerably enhanced the electron mobility and recombination resistance. It reduced the trap density, thereby enabling the ZnO/ABA-based device to achieve improved performance. Consequently, the ZnO/ABA-based device exhibited a noteworthy 14.68% higher maximum power output than that of the device without any ZnO surface modification under 1000 lx halogen (HLG) illumination (P out, max = 354.48 and 309 µA cm−2, respectively). Moreover, under thermal illumination conditions (1000 lx HLG lighting), the ZnO/ABA-based device sustained ∼74% of its initial power conversion efficiency over 120 h, significantly higher than its ABA-free equivalent (∼55%).

Numerical simulation and optimal design of perovskite solar cell based on sensitized zinc oxide electron-transport layer

Numerical simulation and optimal design of perovskite solar cell based on sensitized zinc oxide electron-transport layer

Controlling surface morphology of Ag-doped ZnO as a buffer layer by dispersion engineering in planar perovskite solar cells

In recent years, the power conversion efficiency (PCE (%)) of perovskite solar cells (PSCs) has improved to over 26%. To enhance the photovoltaic properties of PSCs, several materials for the electron transport layer (ETL) have been investigated. Zinc oxide (ZnO) is a significant ETL due to its high electron mobility and optical transparency in PSCs. As a result of various deposition methods, ZnO ETL can be processed at low temperatures. On the other hand, based on several studies, metal-doped ZnO can facilitate electron transfer, thereby improving the performance of un-doped ZnO ETL-based PSCs. Here, to improve the PCE (%) and long-term stability of un-doped ZnO ETL-PSCs, silver (Ag)-doped ZnO 1wt% as a buffer layer is examined. In this paper, with the addition of an organic solvent (ethanol) to the dispersion of Ag-doped ZnO 1 wt% nanoparticles (NPs) in deionized (DI) water, the morphology of the buffer layer (Ag-doped ZnO 1 wt%) can be controlled. This approach focuses on reducing the wettability of the ZnO/Ag-doped ZnO 1 wt% bilayer ETLs and enhancing the stability of un-doped ZnO ETL-PSCs. According to the results, the ZnO/H2O-ethanol mixtures-Ag-doped ZnO 1 wt% bilayer ETL leads to the formation of high-quality perovskite with low defects, reducing the recombination rate, and long-term stability of un-doped ZnO ETL-PSCs in ambient conditions.

Multiarmed Aromatic Ammonium Salts Boost the Efficiency and Stability of Inverted Organic Solar Cells.

Inverted organic solar cells (OSCs) have attracted much attention because of their outstanding stability, with zinc oxide (ZnO) being commonly used as the electron transport layer (ETL). However, both surface defects and the photocatalytic effect of ZnO could lead to serious photodegradation of acceptor materials. This, in turn, hampers the improvement of the efficiency and stability in OSCs. Herein, we developed a multiarmed aromatic ammonium salt, namely, benzene-1,3,5-triyltrimethanaminium bromide (PhTMABr), for modifying ZnO. This compound possesses mild weak acidity aimed at removing the residual amines present within ZnO film. In addition, the PhTMABr could also passivate surface defects of ZnO through multiple hydrogen-bonding interactions between its terminal amino groups and the oxygen anion of ZnO, leading to a better interface contact, which effectively enhances charge transport. As a result, an efficiency of 18.75% was achieved based on the modified ETL compared to the bare ZnO (PCE = 17.34%). The devices utilizing the modified ZnO retained 87% and 90% of their initial PCE after thermal stress aging at 65 °C for 1500 h and continuous 1-sun illumination with maximum power point (MPP) tracking for 1780 h, respectively. Importantly, the extrapolated T80 lifetime with MPP tracking exceeds 10 000 h. The new class of materials employed in this work to modify the ZnO ETL should pave the way for enhancing the efficiency and stability of OSCs, potentially advancing their commercialization process.

Doping of ZnO Electron Transport Layer with Organic Dye Molecules to Enhance Efficiency and Photo‐Stability of the Non‐Fullerene Organic Solar Cells

AbstractThe solution‐processed zinc oxide (ZnO) electron transport layer (ETL) always exhibits ubiquitous defects, and its photocatalytic activity is detrimental for the organic solar cell (OSC) to achieve high efficiency and stability. Herein, an organic dye molecule, PDINN‐S is introduced, to dope ZnO, constructing a hybrid ZnO:PDINN‐S ETL. This hybrid ETL exhibits improved electron mobility and conductivity, particularly post‐light exposure. The catalytic activity of ZnO is also effectively suppressed.Consequently, the efficiency and photo‐stability of inverted non‐fullerene OSCs are synergistically enhanced. The devices based on PM6:Y6/PM6:BTP‐eC9 active layer with ZnO:PDINN‐S as ETL give impressive power conversion efficiencies (PCEs) of 16.78%/17.59%, significantly higher than those with pure ZnO as ETL (PCEs = 15.31%/16.04%). Moreover, ZnO:PDINN‐S‐based device shows exceptional long‐term stability under continuous AM 1.5G illumination (T80 = 1130 h) , overwhelming the reference device (T80 = 455 h). In addition, Incorporating PDINN‐S into ZnO alleviate mechanical stress within the inorganic lattice, making ZnO:PDINN‐S ETL more suitable for the fabrication of flexible devices. Overall, doping ZnO with organic dye molecules offers an innovative strategy for developing multifunctional and efficient hybrid ETL of the non‐fullerene OSCs with excellent efficiency and photo‐stability.

Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics

Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.Graphical

Highly conducting Al-doped zinc oxide electron transport layer for all-inorganic perovskite solar cells: An experimental and simulation study

The need for an excellent electron transport layer (ETL) material is immensely significant for higher conversion efficiency of perovskite solar cells (PSCs). This work centers on the exceptional performance achieved by the Al-doped ZnO (AZO) ETL with reference to undoped ZnO (ZnO). Both doped and undoped ETL materials were synthesized and characterized to determine their structural, morphological, and optical behavior. In this work, solar cell performance of two similar CsPbIBr2-based PSCs with different ETLs namely FTO/ZnO/CsPbIBr2/NiO (Cell #1) and FTO/AZO/CsPbIBr2/NiO (Cell #2) are investigated through numerical simulation method. The obtained characteristics affirms that Cell #2 offers sufficient better performance parameters (Jsc, Voc, FF, and η) against Cell #1 with respect to variation in CsPbIBr2 PVT, ETL and HTL thickness. The adverse effect on J-V characteristics caused by controllable introduction of defect density (Nt) in PVT layer is negligible for Cell #2 compared to its ZnO counterpart. Further, the contribution of AZO ETL layer on cell's performance is evaluated in terms of variation in respective ETL and HTL thickness. The investigation reveals that Cell #2 offers a desirable η of 19.46% at electron capture cross section of 2 × 10−15 cm2 while Cell #1 delivers only 12.48%.

Semitransparent organic solar cells based on low temperature processed PEIE as electron transport layer with enhanced charge transfer ability

In inverted structure-based semitransparent organic solar cells (OSCs), the electron transport layer (ETL) plays a crucial role in the improvement of the transparent cathode efficiency in collecting and extracting negative charge carriers. Zinc oxide (ZnO) thin film prepared by zinc acetate dihydrate precursor with various benefits is generally used as ETL. However, high temperature, less charge transfer ability, and irregular film surface due to fiber-like domain formation limit the device performance. In this work, a new approach is presented by using low-temperature processed polyethylenimine ethoxylated (PEIE) as ETL in semitransparent OSCs fabricated in an ambient environment with a blend of low-bandgap donor polymer PTB7-Th, and fullerene acceptor, PC71BM, based active layer. For semitransparent OSCs, the thickness of the silver electrode has been varied from 55 nm to 25 nm to investigate its effect on the electrical and optical properties of the devices. The power conversion efficiencies (PCE) of 5.1% and 4.6% were achieved for semitransparent devices (25 nm thickness of silver electrode) for PEIE and ZnO ETLs, respectively. Similarly, PCE of 7% and 6.7% have been achieved for opaque devices (85 nm thickness of silver electrode) using PEIE and ZnO ETLs, respectively. PEIE based devices with 25 nm Ag demonstrate about 25%–30% transparency. The impedance spectroscopy measurements indicate low interfacial contact resistance and fast charge transfer capability for PEIE interlayer-based devices compared to the ZnO based devices. The encapsulated semitransparent devices processed and stored in ambient conditions with PEIE and ZnO ETLs were found to retain ≈80% performance for up to 45 days.

Hydrothermal Synthesis of Nitrogen and Phosphorus Codoped Carbon Dot Interfacial Modification Layer for Efficient Charge Transfer between ZnO Electron Transport Layer and PTB7:PC70BM Active Layer

The interface between the active layer and the charge-transporting layer is critical for performance improvement in polymer solar cells (PSCs). The use of zinc oxide (ZnO) as an electron transport layer (ETL) in PSCs was limited due to inherent defects in the surface of ZnO prepared by the sol-gel method, mismatched energy bands with the photoactive layer, and incompatibility between the photoactive layer and ZnO ETL. In this study, nitrogen and phosphorus codoped carbon dots (N & P-CDs) were prepared from Ensete ventricosum (false banana) and used as an interfacial modification layer for ZnO ETL. The inverted devices with structures ITO/ZnO/N & P-CD/PTB7:PC70BM/Al were fabricated to investigate the charge transfer dynamic between the active layer and ETL interface modification with N & P-CDs. We have observed that the interfacial modification between the ZnO ETL and the active layer, using N & P-CDs, improves the charge transfer between ZnO ETL and PTB7:PC70BM active layer. The obtained result shows that the ETL/BHJ interface resistance of the devices with ZnO:undoped CDs, ZnO:N-CDs, ZnO:P-CDs, and ZnO:N & P-CD ETLs decreases dramatically from 103.4 to 84.04, 78.16, 37.88, and 28.9 Ω, respectively. This is due to the improvement of charge extraction efficiency by smoothing ZnO surface defects and minimizing the band mismatch between the active layer and ZnO using N & P-CDs. The results indicate that the water-soluble N & P-CDs developed in this study have the potential to be used for efficient free charge carrier extraction for PSCs.

Spray-Deposited Aluminum-Doped Zinc Oxide as an Efficient Electron Transport Layer for Inverted Organic Solar Cells

Spray-deposited thin films of zinc oxide (ZnO) and aluminum-doped zinc oxide (Al-ZnO) are characterized in detail to get insight into the role of a dopant in the matrix. ZnO and Al-ZnO are implemented as electron transport layers (ETLs) in inverted organic solar cells (IOSCs) with PTB7-Th as a donor and IEICO-4F as a nonfullerene acceptor, forming the bulk heterojunction (BHJ) photoactive layer. Organic solar cells (OSCs) based on the ZnO ETL exhibit a short-circuit current density (JSC) of 24.46 mA/cm2 and an open-circuit voltage (VOC) of 0.68 V, yielding a power conversion efficiency (PCE) of 9.3%. A solar cell based on the Al-ZnO ETL yields a higher JSC of 25.16 mA/cm2 and a VOC of 0.71 V, resulting in a PCE of 10.5%, which indicates that Al doping improves the device performance. Time-delayed collection field (TDCF) measurements yielded field-independent charge generation for both devices. Furthermore, steady-state photoluminescence (PL), time-resolved PL, and transient absorption measurements confirm reduction in the number of defect states in Al-ZnO thin films compared to ZnO thin films and efficient charge transfer, yielding an overall improved IOSC device performance.

Self-Assembled Biomolecule Interlayer for Enhanced Efficiency and Stability of Inverted Organic Solar Cells

Interlayers play a vital role in achieving high efficiency and stability of organic solar cells (OSCs). Zinc oxide (ZnO) has been widely used as an electron transport layer (ETL) in inverted OSCs; however, its high structural defects and intrinsic photocatalytic nature toward nonfullerene acceptors limit its applications in OSCs. Herein, a low-cost, environmentally-friendly biomolecule, potassium aspartic acid (PAA), is introduced as the interlayer on top of the ZnO ETL. Through experimental results and theoretical calculations, we find PAA not only can tune energy alignments and passivate oxygen vacancy defects and zinc interstitial dangling bonds but also can promote the π–π stacking strength of the active layer, leading to enhanced charge collection and photovoltaic performance in both IT series (e.g., PM6:IT-4F) and Y series (e.g., PM6:BTP-4F-C5-16) OSCs. Moreover, benefiting from the reduced surface defects of ZnO, OSCs based upon the ZnO/PAA ETL exhibit superior stabilities under continuous operation as well as UV-light irradiation, leading to an improved T80 lifetime of around 4 times compared to OSCs fabricated without the PAA interlayer. This work provides a universal solution to fabricate efficient and stable inverted OSCs.

Tailored ZnO Functional Nanomaterials for Solution‐Processed Quantum‐Dot Light‐Emitting Diodes

Recent improvements in efficiency and luminance of quantum‐dot light‐emitting diodes (QLEDs) promise a versatile technology for next‐generation lighting and display applications. This is accomplished due to the advances in colloidal quantum‐dot (CQD) synthetic methods together with proper engineering of the charge balance in these devices. The exciton quenching mechanisms occurring at the interface between the QD emissive layer and the zinc oxide (ZnO) electron transport layer (ETL) are one of the important parts of the charge transport path, affecting efficiency and long‐term stability. Herein, a comprehensive overview of the advances in the engineering of ZnO‐based ETLs, in terms of device efficiency and operational stability, is attempted. It is specifically highlighted that significant improvements can be achieved using various ZnO ETL defect passivation methods. This review also describes the key requirements for high‐performance QLEDs from the ETL engineering aspect and catalyzes for further interdisciplinary explorations to realize reliable devices for practical applications.

Effects of Oxygen Vacancies in a Zinc Oxide Electron Transport Layer on Long-Term Degradation and Short-Term Photo-Induced Changes in the Operation Characteristics of Organic Solar Cells

Effects of Oxygen Vacancies in a Zinc Oxide Electron Transport Layer on Long-Term Degradation and Short-Term Photo-Induced Changes in the Operation Characteristics of Organic Solar Cells

Highly efficient inverted quantum dot light-emitting diodes employing sol-gel derived Li-doped ZnO as electron transport layer

Zinc oxide (ZnO) is widely used as an electron transport layer (ETL) in quantum dot light-emitting diodes (QLED) because of its advantages of appropriate energy level and the simple process at low temperature. However, its high conductivity and abundant surface defects have become essential factors limiting the development of QLED. Here, we employ sol-gel derived lithium (Li)-doped ZnO (LZO) film as an ETL for inverted red QLED to achieve low-cost and high-efficiency QLED. We show that the conduction band minimum, the density of oxygen defects and conductivity of ZnO can be tuned by Li-doping. Consequently, the red QLED with 3 wt% Li-doped ZnO ETL exhibit maximum external quantum efficiency (EQE) and current efficiency of 16.4% and 24.1 cd/A, respectively, which are about 1.3-fold greater than those of the device with ZnO ETL. The Li-doping in sol-gel derived ZnO provides a feasible strategy for low-cost and high-performance inverted QLEDs.

Hydrophobic PbS QDs layer decorated ZnO electron transport layer to boost photovoltaic performance of perovskite solar cells

Zinc oxide (ZnO) was traditional cathode material for solar cells due to excellent photoelectric properties. However, when ZnO is used as electron transport layers (ETLs) in perovskite solar cells (PSCs), the occurred deprotonation reactions can easily lead to the decomposition of perovskite layer. Herein, we reported a simple and controllable low-temperature strategy to overcome above problem for achieving high-efficient and stable ZnO based planar PSCs, i.e. the colloidal PbS QDs and tetrabutylammonium iodide (TBAI) was sequentially spin-coated on ZnO ETLs and then mild post-annealing process was carried out to obtaining ZnO/PbS-TBAI compact layer. Due to the iodine ligands from TBAI, the PbS-TBAI films act as both surface wetting control layer and electric dipole layer to adjust the crystal growth of perovskite films and charge behavior within devices. The better non-wetting surface of ZnO/PbS-TBAI ETLs improves the crystallization of the perovskite films by suppressing heterogeneous nucleation. And the unique energy level alignment of ZnO/PbS-TBAI induced by tunable surface dipole moment of TBAI boosted hetero-interface charge extraction of PSCs. Consequently, the optimized ZnO/PbS-TBAI based PSCs exhibits the power conversion efficiency (PCE) of 20.53 %, which is the champion PCE of ZnO PSCs with MAPbI3 as the absorption layer. Stability tests also proved that the PCE of ZnO/PbS-TBAI based PSCs remains more than 86 % after exposure to 40 % humidity for 30 days, which is much more superior to that of control device. We firstly used iodination PbS QD films in this work to achieve higher photovoltaic performance in ZnO based PSCs, which prompts the further application of QDs materials within optoelectronic devices.

Li-Doped ZnO Electron Transport Layer for Improved Performance and Photostability of Organic Solar Cells.

Organic solar cells (OSCs) based on an inverted architecture generally have better stability compared to those based on a standard architecture. However, the photoactive area of the inverted solar cells increases under ultraviolet (UV) or solar illuminatiom because of the too-high conductivity of the UV-illuminated zinc oxide (ZnO) interlayer. This limits the potential of the inverted solar cells for industrial applications. Herein, lithium-doped ZnO (Li-ZnO) films are employed as the cathode interlayer to construct inverted OSCs. The incorporation of Li ions is found to reduce the lateral conductivity of the UV-treated ZnO films because of the presence of Li ions, preventing the high-quality-growth of ZnO nanocrystals. This addresses the problem of having too-high conductivity in the UV-treated ZnO layer, causing the increased photoactive area of inverted solar cells. The overall performance of the solar cell is shown to be higher after the incorporation of Li ions in the ZnO layer, mainly due to the increased fill factor (FF), originating from the reduced trap-assisted recombination losses. Finally, the inverted solar cells based on the Li-ZnO interlayer are demonstrated to have a much better long-term stability, as compared to those based on ZnO. This allows the ZnO-based interlayers to be used for the mass production of organic solar cell modules.

Enhanced Infrared Photodiodes Based on PbS/PbClx Core/Shell Nanocrystals.

Improved passivation strategies to address the more complex surface structure of large-diameter nanocrystals are critical to the advancement of infrared photodetectors based on colloidal PbS. In this contribution, the performance of short-wave infrared (SWIR) photodiodes fabricated with PbS/PbClx (core/shell) nanocrystals vs their PbS-only (core) counterparts are directly compared. Devices using PbS cores suffer from shunting and inefficient charge extraction, while core/shell-based devices exhibit greater external quantum efficiencies and lower dark current densities. To elucidate the implications of the shell chemistry on device performance, thickness-dependent energy level offsets and interfacial chemistry of nanocrystal films with the zinc oxide electron-transport layer are evaluated. The disparate device performance between the two synthetic methods is attributed to unfavorable interface dipole formation and surface defect states, associated with inadequate removal of native organic ligands in core-only films. The core/shell system offers a promising route to manage the additional nonpolar (100) surface facets of larger nanocrystals that conventional halide ligand treatments fail to sufficiently passivate.

The role of rGO sheet and Ag dopant in reducing ZnO electron transport layer recombination in planar perovskite solar cells

For planar perovskite solar cells (PSCs) to have satisfactory performance and acceptable stability, an ETL (electron transport layer) is needed that provides a high level of efficiency. It should be noted that when considering the implementation of n-type metal oxide materials, the ZnO (zinc oxide) can be a great choice for an ETL because it provides a relatively high level of mobility. The current study proposes a new design involving a reduced graphene oxide (rGO) sheet/Ag-doped ZnO bilayer to be utilized as ETL in planar PSCs. Extensive experimental and computational analyses including nano-micro structural, optical and electrical properties are carried out in order to compare the performance and governing mechanisms of rGO/Ag-doped bilayer-based planar PSC to ordinary un-doped ZnO. The results from the performed experiments show that using the rGO sheet as the buffer layer and Ag-doped ZnO significantly increase the power conversion efficiency (PCE) by more than 30% compared to un-doped ZnO ETL in planar PSCs. These improvements in the performance of PSCs can be explained based on fine tuning the energy levels of ZnO/perovskite, since this increases the charge-carrier-extraction from the perovskite layer. Moreover, the results of the study confirm the using the rGO/Ag-doped ZnO bilayer ETL as a new methodology for the creation of stable planar PSCs with low charge recombination rate and high performance.

A low-temperature solution-processed indium incorporated zinc oxide electron transport layer for high-efficiency lead sulfide colloidal quantum dot solar cells.

Colloidal quantum dot solar cells (CQDSCs) have achieved remarkable progress recently in terms of mainly surface passivation and composition-matching matrices on CQDs, while improving the overall photoelectric conversion efficiency (PCE) through electron transport layer (ETL) modifications is less explored. We report a low-temperature solution route to synthesize donor (Al3+/Ga3+/In3+) incorporated zinc oxide (AZO/GZO/IZO) ETL films for PbS CQDSCs. Spectroscopic characterization studies indicate that the IZO ETL fabricated with 150 °C annealing can increase the bandgap the most from 3.56 eV to 3.74 eV, possesses enhanced light transmission (∼94%) and finer particle sizes, and importantly shows the most suitable band alignment and charge transfer ability. Well-dispersed PbS CQDs of around 3 nm are synthesized by a N2-protected reflux method and are surface exchanged with 1-ethyl-3-methylimidazolium iodide (EMII) to allow I- grafting and ethanedithiol (EDT) for the active layer and hole transport layer, respectively. The IZO based PbS CQDSC, with a device architecture of ITO/IZO/PbS-EMII/PbS-EDT/Au, shows an enhanced PCE of 11.1% (comparatively 18% higher than that of the ZnO ETL), a VOC value of 0.64 V, and a JSC of 25.8 mA cm-2. The improved performances benefit from the higher recombination resistance and constrained photoluminescence emission with the utilization of the IZO ETL that provides a superior charge transfer property.